AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE

Takuya Nomura; Kenta Okumura; Hideto Miyake; Kazumasa Hiramatsu; Osamu Eryu; Yoichi Yamada

doi:10.1016/j.jcrysgro.2011.12.025

AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE

Takuya Nomura, Kenta Okumura, Hideto Miyake, Kazumasa Hiramatsu, Osamu Eryu, Yoichi Yamada

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Crack-free thick AlN layers with low impurity concentrations were grown on free-standing AlN substrates fabricated by a sublimation method. Cracks due to tensile stresses were generated in the overgrowth layer when using on-axis AlN (0 0 0 1) substrates, as indicated by Raman scattering spectroscopy. In contrast, cracks were not generated when using 5°off-angle AlN (0 0 0 1) substrates. High crystalline quality was indicated by X-ray rocking curve (XRC) analysis. The full width at half maximum (FWHM) values of the (0 0 0 2) and (1 0-1 0) diffractions were 277 and 306 arcsec, respectively. Secondary ion mass spectrometry (SIMS) measurements indicated that the Si and C impurity concentrations were reduced to half of those in the sublimation-grown AlN substrates.

Original language	English
Pages (from-to)	69-71
Number of pages	3
Journal	Journal of Crystal Growth
Volume	350
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.12.025
Publication status	Published - 01-07-2012
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2011.12.025

Cite this

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title = "AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE",

abstract = "Crack-free thick AlN layers with low impurity concentrations were grown on free-standing AlN substrates fabricated by a sublimation method. Cracks due to tensile stresses were generated in the overgrowth layer when using on-axis AlN (0 0 0 1) substrates, as indicated by Raman scattering spectroscopy. In contrast, cracks were not generated when using 5°off-angle AlN (0 0 0 1) substrates. High crystalline quality was indicated by X-ray rocking curve (XRC) analysis. The full width at half maximum (FWHM) values of the (0 0 0 2) and (1 0-1 0) diffractions were 277 and 306 arcsec, respectively. Secondary ion mass spectrometry (SIMS) measurements indicated that the Si and C impurity concentrations were reduced to half of those in the sublimation-grown AlN substrates.",

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T1 - AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE

AU - Nomura, Takuya

AU - Okumura, Kenta

AU - Miyake, Hideto

AU - Hiramatsu, Kazumasa

AU - Eryu, Osamu

AU - Yamada, Yoichi

PY - 2012/7/1

Y1 - 2012/7/1

N2 - Crack-free thick AlN layers with low impurity concentrations were grown on free-standing AlN substrates fabricated by a sublimation method. Cracks due to tensile stresses were generated in the overgrowth layer when using on-axis AlN (0 0 0 1) substrates, as indicated by Raman scattering spectroscopy. In contrast, cracks were not generated when using 5°off-angle AlN (0 0 0 1) substrates. High crystalline quality was indicated by X-ray rocking curve (XRC) analysis. The full width at half maximum (FWHM) values of the (0 0 0 2) and (1 0-1 0) diffractions were 277 and 306 arcsec, respectively. Secondary ion mass spectrometry (SIMS) measurements indicated that the Si and C impurity concentrations were reduced to half of those in the sublimation-grown AlN substrates.

AB - Crack-free thick AlN layers with low impurity concentrations were grown on free-standing AlN substrates fabricated by a sublimation method. Cracks due to tensile stresses were generated in the overgrowth layer when using on-axis AlN (0 0 0 1) substrates, as indicated by Raman scattering spectroscopy. In contrast, cracks were not generated when using 5°off-angle AlN (0 0 0 1) substrates. High crystalline quality was indicated by X-ray rocking curve (XRC) analysis. The full width at half maximum (FWHM) values of the (0 0 0 2) and (1 0-1 0) diffractions were 277 and 306 arcsec, respectively. Secondary ion mass spectrometry (SIMS) measurements indicated that the Si and C impurity concentrations were reduced to half of those in the sublimation-grown AlN substrates.

KW - A2. Homoepitaxial growth

KW - A3. HVPE

KW - B1. AlN

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AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE

Abstract

All Science Journal Classification (ASJC) codes

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