Correlation between Er-luminescent centers and defects in Si co-implanted with Er and O

K. Nakashima; O. Eryu; H. Akiyama; Y. Maeda; H. Ebisu

doi:10.1016/S0168-583X(00)00671-6

Correlation between Er-luminescent centers and defects in Si co-implanted with Er and O

K. Nakashima, O. Eryu, H. Akiyama, Y. Maeda, H. Ebisu

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Correlation between evolution of Er-luminescent centers and the incorporation of Er and O during solid phase epitaxy (SPE) in Er and O co-implanted Si has been investigated, especially paying attention to the role of oxygen on segregation and trapping of Er. The SPE growth rate of the amorphous silicon layer, which is monitored in real time, is greatly enhanced from the beginning stage of SPE by more than one order magnitude in Si co-doped with Er and O, comparing with that of the undoped amorphous Si layer. The strong interaction between Er and O in circumstances under the presence of both species determines the concentration profiles of a majority of the Er and the O, leading to the formation of Er-luminescent centers.

Original language	English
Pages (from-to)	208-213
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	175-177
DOIs	https://doi.org/10.1016/S0168-583X(00)00671-6
Publication status	Published - 04-2001
Externally published	Yes
Event	12th International Conference on Ion Beam Modification of Materials - Rio Grande do Sul, Brazil Duration: 03-09-2000 → 08-09-2000

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

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10.1016/S0168-583X(00)00671-6

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title = "Correlation between Er-luminescent centers and defects in Si co-implanted with Er and O",

abstract = "Correlation between evolution of Er-luminescent centers and the incorporation of Er and O during solid phase epitaxy (SPE) in Er and O co-implanted Si has been investigated, especially paying attention to the role of oxygen on segregation and trapping of Er. The SPE growth rate of the amorphous silicon layer, which is monitored in real time, is greatly enhanced from the beginning stage of SPE by more than one order magnitude in Si co-doped with Er and O, comparing with that of the undoped amorphous Si layer. The strong interaction between Er and O in circumstances under the presence of both species determines the concentration profiles of a majority of the Er and the O, leading to the formation of Er-luminescent centers.",

keywords = "Erbium, Ion-implantation, Oxygen, Photoluminescence, Solid phase epitaxy",

author = "K. Nakashima and O. Eryu and H. Akiyama and Y. Maeda and H. Ebisu",

year = "2001",

month = apr,

doi = "10.1016/S0168-583X(00)00671-6",

language = "English",

volume = "175-177",

pages = "208--213",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

note = "12th International Conference on Ion Beam Modification of Materials ; Conference date: 03-09-2000 Through 08-09-2000",

}

TY - JOUR

T1 - Correlation between Er-luminescent centers and defects in Si co-implanted with Er and O

AU - Nakashima, K.

AU - Eryu, O.

AU - Akiyama, H.

AU - Maeda, Y.

AU - Ebisu, H.

PY - 2001/4

Y1 - 2001/4

N2 - Correlation between evolution of Er-luminescent centers and the incorporation of Er and O during solid phase epitaxy (SPE) in Er and O co-implanted Si has been investigated, especially paying attention to the role of oxygen on segregation and trapping of Er. The SPE growth rate of the amorphous silicon layer, which is monitored in real time, is greatly enhanced from the beginning stage of SPE by more than one order magnitude in Si co-doped with Er and O, comparing with that of the undoped amorphous Si layer. The strong interaction between Er and O in circumstances under the presence of both species determines the concentration profiles of a majority of the Er and the O, leading to the formation of Er-luminescent centers.

AB - Correlation between evolution of Er-luminescent centers and the incorporation of Er and O during solid phase epitaxy (SPE) in Er and O co-implanted Si has been investigated, especially paying attention to the role of oxygen on segregation and trapping of Er. The SPE growth rate of the amorphous silicon layer, which is monitored in real time, is greatly enhanced from the beginning stage of SPE by more than one order magnitude in Si co-doped with Er and O, comparing with that of the undoped amorphous Si layer. The strong interaction between Er and O in circumstances under the presence of both species determines the concentration profiles of a majority of the Er and the O, leading to the formation of Er-luminescent centers.

KW - Erbium

KW - Ion-implantation

KW - Oxygen

KW - Photoluminescence

KW - Solid phase epitaxy

UR - https://www.scopus.com/pages/publications/0035302928

UR - https://www.scopus.com/inward/citedby.url?scp=0035302928&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(00)00671-6

DO - 10.1016/S0168-583X(00)00671-6

M3 - Conference article

AN - SCOPUS:0035302928

SN - 0168-583X

VL - 175-177

SP - 208

EP - 213

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

T2 - 12th International Conference on Ion Beam Modification of Materials

Y2 - 3 September 2000 through 8 September 2000

ER -

Correlation between Er-luminescent centers and defects in Si co-implanted with Er and O

Abstract

All Science Journal Classification (ASJC) codes

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