Direct observation of the solid-phase recrystallization of self-implanted amorphous SiC layer on (11-20), (1-100), and (0001) oriented 6H-SiC

Direct observation of the kinetics of solid phase recrystallization during furnace annealling of self-implanted amorphous layer on SiC with different substrate orientation is reported. An in situ time resolved optical reflectivity measurements were used to measure the thickness of recrystallized layer on the crystalline substrate during furnace annealing. Orientation dependence of the solid phase regrowth is strong. In the case of annealing at the same temperature, 6H (1150) oriented samples exhibit® by the Arrhenius equation about a 14 times higher solid phase recrystallization rate than 6H (0001) oriented samples. In the (0001) oriented sample, with the advance of recrystallization, the roughness of the amorphous-recrystaliized layer interface increases. The activation energy of the solid phase regrowth is decided from solid phase recrystallization rate.