Abstract
XeCl excimer laser annealing of ion-implanted 6H-SiC was carried out. Laser annealed SiC was characterized by Rutherford backscattering, secondary ion mass spectroscopy (SIMS), electrical conductivity and photoluminescence. Laser irradiation reduced the χ values and increased electrical conductivity. The activation efficiency of the laser-annealed Al+ implanted SiC was estimated to be about 0.1%. SIMS results suggest that SiC substrates were not melted by laser irradiation and that the laser annealing effect proceeded in solid phase.
| Original language | English |
|---|---|
| Pages (from-to) | II/- |
| Journal | Materials Science Forum |
| Volume | 338 |
| Publication status | Published - 2000 |
| Externally published | Yes |
| Event | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: 10-10-1999 → 15-10-1999 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering