Excimer laser etching process of CdTe crystals for formation of deep vertical trenches

K. Yasuda; M. Niraula; K. Nakamura; M. Yokota; I. Shingu; K. Noda; Y. Agata; K. Abe; O. Eryu

doi:10.1007/s11664-007-0105-9

Excimer laser etching process of CdTe crystals for formation of deep vertical trenches

K. Yasuda, M. Niraula, K. Nakamura, M. Yokota, I. Shingu, K. Noda, Y. Agata, K. Abe, O. Eryu

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Deep isolation trenches with high aspect ratio were formed on CdTe crystals using the excimer laser etching technique. Vertical trenches 80-μm deep and 55-μm wide were formed in 5 min by irradiating a laser on the CdTe crystal through a contact-type metal mask in vacuum. Surface chemistry of the laser-irradiated CdTe crystal was examined by Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and photoluminescence (PL) to determine the extent of laser-induced damage. It was found that the damaged layer remains confined to the thin surface layer in the submicron range, which could be easily removed by a light Br-methanol etch.

Original language	English
Pages (from-to)	837-840
Number of pages	4
Journal	Journal of Electronic Materials
Volume	36
Issue number	8
DOIs	https://doi.org/10.1007/s11664-007-0105-9
Publication status	Published - 08-2007
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-007-0105-9

Cite this

@article{118fe4f4b5ee4bf9b38f6d2640a8b4d1,

title = "Excimer laser etching process of CdTe crystals for formation of deep vertical trenches",

abstract = "Deep isolation trenches with high aspect ratio were formed on CdTe crystals using the excimer laser etching technique. Vertical trenches 80-μm deep and 55-μm wide were formed in 5 min by irradiating a laser on the CdTe crystal through a contact-type metal mask in vacuum. Surface chemistry of the laser-irradiated CdTe crystal was examined by Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and photoluminescence (PL) to determine the extent of laser-induced damage. It was found that the damaged layer remains confined to the thin surface layer in the submicron range, which could be easily removed by a light Br-methanol etch.",

keywords = "CdTe, Deep isolation trenches, Excimer laser etching, Surface chemistry",

author = "K. Yasuda and M. Niraula and K. Nakamura and M. Yokota and I. Shingu and K. Noda and Y. Agata and K. Abe and O. Eryu",

year = "2007",

month = aug,

doi = "10.1007/s11664-007-0105-9",

language = "English",

volume = "36",

pages = "837--840",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "8",

}

TY - JOUR

T1 - Excimer laser etching process of CdTe crystals for formation of deep vertical trenches

AU - Yasuda, K.

AU - Niraula, M.

AU - Nakamura, K.

AU - Yokota, M.

AU - Shingu, I.

AU - Noda, K.

AU - Agata, Y.

AU - Abe, K.

AU - Eryu, O.

PY - 2007/8

Y1 - 2007/8

N2 - Deep isolation trenches with high aspect ratio were formed on CdTe crystals using the excimer laser etching technique. Vertical trenches 80-μm deep and 55-μm wide were formed in 5 min by irradiating a laser on the CdTe crystal through a contact-type metal mask in vacuum. Surface chemistry of the laser-irradiated CdTe crystal was examined by Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and photoluminescence (PL) to determine the extent of laser-induced damage. It was found that the damaged layer remains confined to the thin surface layer in the submicron range, which could be easily removed by a light Br-methanol etch.

AB - Deep isolation trenches with high aspect ratio were formed on CdTe crystals using the excimer laser etching technique. Vertical trenches 80-μm deep and 55-μm wide were formed in 5 min by irradiating a laser on the CdTe crystal through a contact-type metal mask in vacuum. Surface chemistry of the laser-irradiated CdTe crystal was examined by Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and photoluminescence (PL) to determine the extent of laser-induced damage. It was found that the damaged layer remains confined to the thin surface layer in the submicron range, which could be easily removed by a light Br-methanol etch.

KW - CdTe

KW - Deep isolation trenches

KW - Excimer laser etching

KW - Surface chemistry

UR - https://www.scopus.com/pages/publications/34548249674

UR - https://www.scopus.com/inward/citedby.url?scp=34548249674&partnerID=8YFLogxK

U2 - 10.1007/s11664-007-0105-9

DO - 10.1007/s11664-007-0105-9

M3 - Article

AN - SCOPUS:34548249674

SN - 0361-5235

VL - 36

SP - 837

EP - 840

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 8

ER -

Excimer laser etching process of CdTe crystals for formation of deep vertical trenches

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this