Femtosecond-Laser Irradiation onto Sapphire Substrates in an N2 Ambient Atmosphere

Reina Miyagawa; Kenzo Goto; Osamu Eryu

doi:10.1002/pssc.201700224

Femtosecond-Laser Irradiation onto Sapphire Substrates in an N₂ Ambient Atmosphere

Reina Miyagawa, Kenzo Goto, Osamu Eryu

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Herein, a new technique is proposed for forming nitrogen-related bonds anywhere on a substrate using a femtosecond laser. Laser-induced periodic structures with a minimum periodicity of <50 nm are formed on a sapphire substrate. Nitrogen-related bonds are formed at the sapphire surface by laser irradiation in N₂ ambient. This technique is applicable to periodic polarization inversion in nitride semiconductors for nonlinear optical devices.

Original language	English
Article number	1700224
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	14
Issue number	11
DOIs	https://doi.org/10.1002/pssc.201700224
Publication status	Published - 11-2017
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1002/pssc.201700224

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abstract = "Herein, a new technique is proposed for forming nitrogen-related bonds anywhere on a substrate using a femtosecond laser. Laser-induced periodic structures with a minimum periodicity of <50 nm are formed on a sapphire substrate. Nitrogen-related bonds are formed at the sapphire surface by laser irradiation in N2 ambient. This technique is applicable to periodic polarization inversion in nitride semiconductors for nonlinear optical devices.",

keywords = "femtosecond laser, fine structures, nitridation",

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AU - Goto, Kenzo

AU - Eryu, Osamu

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AB - Herein, a new technique is proposed for forming nitrogen-related bonds anywhere on a substrate using a femtosecond laser. Laser-induced periodic structures with a minimum periodicity of <50 nm are formed on a sapphire substrate. Nitrogen-related bonds are formed at the sapphire surface by laser irradiation in N2 ambient. This technique is applicable to periodic polarization inversion in nitride semiconductors for nonlinear optical devices.

KW - femtosecond laser

KW - fine structures

KW - nitridation

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Femtosecond-Laser Irradiation onto Sapphire Substrates in an N₂ Ambient Atmosphere

Abstract

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