Formation of a p-n junction in silicon carbide by aluminum doping at room temperature using a pulsed laser doping method

Osamu Eryu; Yasuo Okuyama; Kenshiro Nakashima; Toshitake Nakata; Masanori Watanabe

doi:10.1063/1.115075

Formation of a p-n junction in silicon carbide by aluminum doping at room temperature using a pulsed laser doping method

Osamu Eryu, Yasuo Okuyama, Kenshiro Nakashima, Toshitake Nakata, Masanori Watanabe

Research output: Contribution to journal › Article › peer-review

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Abstract

A p-n junction has been formed in n-type silicon carbide (6H-SiC) by aluminum (Al) doping at room temperature using a pulsed laser doping method. A 6H-SiC substrate in [H₂+(CH₃)₃Al] atmosphere was irradiated by an KrF excimer laser of 20 ns full width at half-maximum. The depth profile of Al determined by secondary ion mass spectroscopy showed a rectangularlike shape with a maximum concentration of 1×10²² Al/cm³. Furthermore, Al atoms were doped to a depth of about 0.05 μm from the surface. The current-voltage characteristics of the p-n junction clearly showed the rectifying property with low leakage current.

Original language	English
Pages (from-to)	2052
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115075
Publication status	Published - 1994
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.115075

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title = "Formation of a p-n junction in silicon carbide by aluminum doping at room temperature using a pulsed laser doping method",

abstract = "A p-n junction has been formed in n-type silicon carbide (6H-SiC) by aluminum (Al) doping at room temperature using a pulsed laser doping method. A 6H-SiC substrate in [H2+(CH3)3Al] atmosphere was irradiated by an KrF excimer laser of 20 ns full width at half-maximum. The depth profile of Al determined by secondary ion mass spectroscopy showed a rectangularlike shape with a maximum concentration of 1×1022 Al/cm3. Furthermore, Al atoms were doped to a depth of about 0.05 μm from the surface. The current-voltage characteristics of the p-n junction clearly showed the rectifying property with low leakage current.",

author = "Osamu Eryu and Yasuo Okuyama and Kenshiro Nakashima and Toshitake Nakata and Masanori Watanabe",

year = "1994",

doi = "10.1063/1.115075",

language = "English",

volume = "67",

pages = "2052",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Formation of a p-n junction in silicon carbide by aluminum doping at room temperature using a pulsed laser doping method

AU - Eryu, Osamu

AU - Okuyama, Yasuo

AU - Nakashima, Kenshiro

AU - Nakata, Toshitake

AU - Watanabe, Masanori

PY - 1994

Y1 - 1994

N2 - A p-n junction has been formed in n-type silicon carbide (6H-SiC) by aluminum (Al) doping at room temperature using a pulsed laser doping method. A 6H-SiC substrate in [H2+(CH3)3Al] atmosphere was irradiated by an KrF excimer laser of 20 ns full width at half-maximum. The depth profile of Al determined by secondary ion mass spectroscopy showed a rectangularlike shape with a maximum concentration of 1×1022 Al/cm3. Furthermore, Al atoms were doped to a depth of about 0.05 μm from the surface. The current-voltage characteristics of the p-n junction clearly showed the rectifying property with low leakage current.

AB - A p-n junction has been formed in n-type silicon carbide (6H-SiC) by aluminum (Al) doping at room temperature using a pulsed laser doping method. A 6H-SiC substrate in [H2+(CH3)3Al] atmosphere was irradiated by an KrF excimer laser of 20 ns full width at half-maximum. The depth profile of Al determined by secondary ion mass spectroscopy showed a rectangularlike shape with a maximum concentration of 1×1022 Al/cm3. Furthermore, Al atoms were doped to a depth of about 0.05 μm from the surface. The current-voltage characteristics of the p-n junction clearly showed the rectifying property with low leakage current.

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VL - 67

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JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Formation of a p-n junction in silicon carbide by aluminum doping at room temperature using a pulsed laser doping method

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