Formation of an ohmic electrode in SiC using a pulsed laser irradiation method

We have succeeded in the formation of a Ni electrode on n-type silicon carbide (6H-SiC) at room temperature using the pulsed laser doping (PLD) method. Characteristics of the PLD method for the formation of an ohmic electrode in SiC are shown to be as follows; (1) The formation of an ohmic electrode in SiC at room temperature was achieved. (2) Metal dopants are doped to a depth of about 150 nm from the surface. (3) The interface between the laser doped region and the SiC substrate was found to be an abrupt junction. Furthermore, we have attempted to form the ohmic contact by metal atoms doping with laser irradiation into a bulk SiC through a mask during thermal evaporation of the metal. This technique is successful for the formation of dot electrodes 0.8 mm in diameter on the SiC substrate.