Formation of tungsten ohmic contact on n-type 6H-SiC by pulsed laser processes

Tungsten (W) ohmic contacts have been fabricated on n-type 6H-SiC at room temperature using a pulsed laser doping (PLD) method together with laser ablation processes; W-doping by pulsed laser irradiation on W films deposed with laser ablation. Abrupt interface has been achieved between the substrate and a thin W-doped layer 10-20 nm in depth. The W-doped layer consists of a thin oxide layer mixed with SiO₂ and WO_x at the top surface region and the metallic W-layer at the interface with the substrate. The contact resistivity of 1-2×10^-2 Ωcm² have been obtained without post heat treatments.