Abstract
Ohmic contacts to 6H-SiC have been improved in several points such as contact resistivity, surface morphology, depth profiles, and process temperature. Both W/Ti contacts for n-type and Al/Ti contacts for p-type 6H-SiC have been fabricated with excimer pulsed laser irradiation to the metal-deposited substrates at room temperature. Properties of laser-processed contact have exceeded those of the ordinary annealed contacts. Very thin ohmic contact layers with smooth surface morphology have been obtained by this technology.
| Original language | English |
|---|---|
| Pages (from-to) | II/- |
| Journal | Materials Science Forum |
| Volume | 338 |
| Publication status | Published - 2000 |
| Externally published | Yes |
| Event | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: 10-10-1999 → 15-10-1999 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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