TY - GEN
T1 - Improvements in electrical properties of SiC surface using mechano-chemical polishing
AU - Hotta, Kazutoshi
AU - Hirose, Kenji
AU - Tanaka, Yayoi
AU - Kawata, Kenji
AU - Eryu, Osamu
PY - 2009
Y1 - 2009
N2 - To use SiC substrate as a semiconductor device and epitaxial growth, the surface of SiC substrate should be made smooth at an atomic level in the state of monocrystalline. But, the past slurry caused defects such as the pit and the scratch on the surface. This tendency was very strong in (000-1) C-face. We achieved ideal surface for SiC devices using newly developed slurry. In this surface, the roughness (Ra) of (0001) Si face and (000-1) C face evaluated by the AFM were 0.1nm or less, and confirmed that the surface were monocrystalline by CAICISS measurement. From these results, it is thought that the crystal face obtained by the slurry newly developed. In addition, the Schottky barrier diode was formed directly on the polished surface, that was obtained the breakdown voltage of 1.2kV or more. We thought that this results is possible to make the Schottky barrier diode without epitaxial growth.
AB - To use SiC substrate as a semiconductor device and epitaxial growth, the surface of SiC substrate should be made smooth at an atomic level in the state of monocrystalline. But, the past slurry caused defects such as the pit and the scratch on the surface. This tendency was very strong in (000-1) C-face. We achieved ideal surface for SiC devices using newly developed slurry. In this surface, the roughness (Ra) of (0001) Si face and (000-1) C face evaluated by the AFM were 0.1nm or less, and confirmed that the surface were monocrystalline by CAICISS measurement. From these results, it is thought that the crystal face obtained by the slurry newly developed. In addition, the Schottky barrier diode was formed directly on the polished surface, that was obtained the breakdown voltage of 1.2kV or more. We thought that this results is possible to make the Schottky barrier diode without epitaxial growth.
KW - AFM
KW - Caiciss
KW - Mechano-chemical polishing
KW - Schottky barrier diode
UR - https://www.scopus.com/pages/publications/63849247239
UR - https://www.scopus.com/inward/citedby.url?scp=63849247239&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:63849247239
SN - 9780878493579
T3 - Materials Science Forum
SP - 823
EP - 826
BT - Silicon Carbide and Related Materials 2007
A2 - Suzuki, Akira
A2 - Okumura, Hajime
A2 - Fukuda, Kenji
A2 - Nishizawa, Shin-ichi
A2 - Kimoto, Tsunenobu
A2 - Fuyuki, Takashi
PB - Trans Tech Publications Ltd
T2 - 12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
Y2 - 14 October 2007 through 19 October 2007
ER -