Impurity activation in N+ ion-implanted 6H-SiC with pulsed laser annealing method

O. Eryu; K. Aoyama; K. Abe; K. Nakashima

Impurity activation in N⁺ ion-implanted 6H-SiC with pulsed laser annealing method

O. Eryu, K. Aoyama, K. Abe, K. Nakashima

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have succeeded in pulsed laser annealing of N⁺ ion-implanted n-type 6H-SiC for increasing the carrier density near surface in order to decrease contact resistance, which induces little redistribution of implanted impurities after laser irradiation. By repeated laser irradiation at low energy density, the ion-implanted impurities were electrically activated without melting the surface region. SiC substrates with impurity concentration of 2×10¹⁸/cm³ were implanted with 30 keV N⁺ ions with dose of 4.7×10¹³/cm². After pulsed laser annealing, a contact resistance was measured to be 5.7×10^-5 Ωm² using Al electrode on the N⁺-implanted layer.

Original language	English
Pages (from-to)	H5.31.1-H5.31.6
Journal	Materials Research Society Symposium - Proceedings
Volume	640
Publication status	Published - 2001
Externally published	Yes
Event	Silicon Carbide- Materials, Processing and Devices - Boston, MA, United States Duration: 27-11-2000 → 29-11-2000

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{95b517fdf7074bdda6ecc1d070844dc5,

title = "Impurity activation in N+ ion-implanted 6H-SiC with pulsed laser annealing method",

abstract = "We have succeeded in pulsed laser annealing of N+ ion-implanted n-type 6H-SiC for increasing the carrier density near surface in order to decrease contact resistance, which induces little redistribution of implanted impurities after laser irradiation. By repeated laser irradiation at low energy density, the ion-implanted impurities were electrically activated without melting the surface region. SiC substrates with impurity concentration of 2×1018/cm3 were implanted with 30 keV N+ ions with dose of 4.7×1013/cm2. After pulsed laser annealing, a contact resistance was measured to be 5.7×10-5 Ωm2 using Al electrode on the N+-implanted layer.",

author = "O. Eryu and K. Aoyama and K. Abe and K. Nakashima",

year = "2001",

language = "English",

volume = "640",

pages = "H5.31.1--H5.31.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Silicon Carbide- Materials, Processing and Devices ; Conference date: 27-11-2000 Through 29-11-2000",

}

TY - JOUR

T1 - Impurity activation in N+ ion-implanted 6H-SiC with pulsed laser annealing method

AU - Eryu, O.

AU - Aoyama, K.

AU - Abe, K.

AU - Nakashima, K.

PY - 2001

Y1 - 2001

N2 - We have succeeded in pulsed laser annealing of N+ ion-implanted n-type 6H-SiC for increasing the carrier density near surface in order to decrease contact resistance, which induces little redistribution of implanted impurities after laser irradiation. By repeated laser irradiation at low energy density, the ion-implanted impurities were electrically activated without melting the surface region. SiC substrates with impurity concentration of 2×1018/cm3 were implanted with 30 keV N+ ions with dose of 4.7×1013/cm2. After pulsed laser annealing, a contact resistance was measured to be 5.7×10-5 Ωm2 using Al electrode on the N+-implanted layer.

AB - We have succeeded in pulsed laser annealing of N+ ion-implanted n-type 6H-SiC for increasing the carrier density near surface in order to decrease contact resistance, which induces little redistribution of implanted impurities after laser irradiation. By repeated laser irradiation at low energy density, the ion-implanted impurities were electrically activated without melting the surface region. SiC substrates with impurity concentration of 2×1018/cm3 were implanted with 30 keV N+ ions with dose of 4.7×1013/cm2. After pulsed laser annealing, a contact resistance was measured to be 5.7×10-5 Ωm2 using Al electrode on the N+-implanted layer.

UR - https://www.scopus.com/pages/publications/17144463907

UR - https://www.scopus.com/inward/citedby.url?scp=17144463907&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:17144463907

SN - 0272-9172

VL - 640

SP - H5.31.1-H5.31.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Silicon Carbide- Materials, Processing and Devices

Y2 - 27 November 2000 through 29 November 2000

ER -

Impurity activation in N⁺ ion-implanted 6H-SiC with pulsed laser annealing method

Abstract

All Science Journal Classification (ASJC) codes

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