In-situ cleaning of 4H-SiC (0001) surfaces by using pulsed laser irradiation

Koji Abe; Osamu Eryu; Masakiyo Sumitomo; Yusuke Kariya; Mina Kato; Kenshiro Nakashima

doi:10.1143/jjap.42.4241

In-situ cleaning of 4H-SiC (0001) surfaces by using pulsed laser irradiation

Koji Abe, Osamu Eryu, Masakiyo Sumitomo, Yusuke Kariya, Mina Kato, Kenshiro Nakashima

Research output: Contribution to journal › Article › peer-review

Abstract

The 4H-SJC (0001) surfaces before and after pulsed laser cleaning (PLC) have been investigated by I-V, C-V, and time-of-flight (TOP) measurements. The electrical characteristics for metal/4H-SiC structures were improved by PLC at the laser energy density of 30 mJ/cm². The ideality factor and the pinning degree for metal/4H-SiC structures decreased by using PLC at 30 mJ/cm² prior to metallization. TOP measurements indicate that atoms on 4H-SiC surfaces are desorbed by pulsed laser irradiation above 30mJ/cm². We found that pulsed laser irradiation at 50mJ/cm² causes decomposition of 4H-SiC surfaces. We discuss the laser energy density dependence of PLC of 4H-SiC (0001) surfaces.

Original language	English
Pages (from-to)	4241-4244
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	7 A
DOIs	https://doi.org/10.1143/jjap.42.4241
Publication status	Published - 07-2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.1143/jjap.42.4241

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title = "In-situ cleaning of 4H-SiC (0001) surfaces by using pulsed laser irradiation",

abstract = "The 4H-SJC (0001) surfaces before and after pulsed laser cleaning (PLC) have been investigated by I-V, C-V, and time-of-flight (TOP) measurements. The electrical characteristics for metal/4H-SiC structures were improved by PLC at the laser energy density of 30 mJ/cm2. The ideality factor and the pinning degree for metal/4H-SiC structures decreased by using PLC at 30 mJ/cm2 prior to metallization. TOP measurements indicate that atoms on 4H-SiC surfaces are desorbed by pulsed laser irradiation above 30mJ/cm2. We found that pulsed laser irradiation at 50mJ/cm2 causes decomposition of 4H-SiC surfaces. We discuss the laser energy density dependence of PLC of 4H-SiC (0001) surfaces.",

keywords = "Excimer laser, Schottky barrier height, SiC, Surface cleaning, TOF",

author = "Koji Abe and Osamu Eryu and Masakiyo Sumitomo and Yusuke Kariya and Mina Kato and Kenshiro Nakashima",

year = "2003",

month = jul,

doi = "10.1143/jjap.42.4241",

language = "English",

volume = "42",

pages = "4241--4244",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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number = "7 A",

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TY - JOUR

T1 - In-situ cleaning of 4H-SiC (0001) surfaces by using pulsed laser irradiation

AU - Abe, Koji

AU - Eryu, Osamu

AU - Sumitomo, Masakiyo

AU - Kariya, Yusuke

AU - Kato, Mina

AU - Nakashima, Kenshiro

PY - 2003/7

Y1 - 2003/7

N2 - The 4H-SJC (0001) surfaces before and after pulsed laser cleaning (PLC) have been investigated by I-V, C-V, and time-of-flight (TOP) measurements. The electrical characteristics for metal/4H-SiC structures were improved by PLC at the laser energy density of 30 mJ/cm2. The ideality factor and the pinning degree for metal/4H-SiC structures decreased by using PLC at 30 mJ/cm2 prior to metallization. TOP measurements indicate that atoms on 4H-SiC surfaces are desorbed by pulsed laser irradiation above 30mJ/cm2. We found that pulsed laser irradiation at 50mJ/cm2 causes decomposition of 4H-SiC surfaces. We discuss the laser energy density dependence of PLC of 4H-SiC (0001) surfaces.

AB - The 4H-SJC (0001) surfaces before and after pulsed laser cleaning (PLC) have been investigated by I-V, C-V, and time-of-flight (TOP) measurements. The electrical characteristics for metal/4H-SiC structures were improved by PLC at the laser energy density of 30 mJ/cm2. The ideality factor and the pinning degree for metal/4H-SiC structures decreased by using PLC at 30 mJ/cm2 prior to metallization. TOP measurements indicate that atoms on 4H-SiC surfaces are desorbed by pulsed laser irradiation above 30mJ/cm2. We found that pulsed laser irradiation at 50mJ/cm2 causes decomposition of 4H-SiC surfaces. We discuss the laser energy density dependence of PLC of 4H-SiC (0001) surfaces.

KW - Excimer laser

KW - Schottky barrier height

KW - SiC

KW - Surface cleaning

KW - TOF

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DO - 10.1143/jjap.42.4241

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SP - 4241

EP - 4244

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 7 A

ER -

In-situ cleaning of 4H-SiC (0001) surfaces by using pulsed laser irradiation

Abstract

All Science Journal Classification (ASJC) codes

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