Low-temperature growth of GaAs by organometallic vapor phase epitaxy using TEGa and TBAs

Keiji Hidaka; Takashi Hiramatsu; Yoshikazu Terai; Osamu Eryu; Yasufumi Fujiwara

doi:10.2472/jsms.56.880

Low-temperature growth of GaAs by organometallic vapor phase epitaxy using TEGa and TBAs

Keiji Hidaka
, Takashi Hiramatsu
, Yoshikazu Terai
, Osamu Eryu
, Yasufumi Fujiwara

Research output: Contribution to journal › Article › peer-review

Abstract

GaAs epitaxial layers were grown by organometallic vapor phase epitaxy (OMVPE) using TEGa and TBAs over a wide range of growth temperature (350°C-700°C) and V/III ratio (2-9). GaAs with excellent surface morphology was obtained when the growth temperature was higher than 600°C. The GaAs surface tended to be rough with decreasing growth temperature below 550°C. When the growth temperature was decreased to 400°C, p-type GaAs was obtained with specular surface. The hole concentration increased with decreasing V/III ratio. The hole concentration was as high as 5.5 × 10 ¹⁷ cm ⁴ for the sample grown at 400°C with V/III ratio = 2.

Original language	English
Pages (from-to)	880-885
Number of pages	6
Journal	Zairyo/Journal of the Society of Materials Science, Japan
Volume	56
Issue number	9
DOIs	https://doi.org/10.2472/jsms.56.880
Publication status	Published - 09-2007
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Cite this

@article{91dec23840874808b59c7c2f814bcc55,

title = "Low-temperature growth of GaAs by organometallic vapor phase epitaxy using TEGa and TBAs",

abstract = "GaAs epitaxial layers were grown by organometallic vapor phase epitaxy (OMVPE) using TEGa and TBAs over a wide range of growth temperature (350°C-700°C) and V/III ratio (2-9). GaAs with excellent surface morphology was obtained when the growth temperature was higher than 600°C. The GaAs surface tended to be rough with decreasing growth temperature below 550°C. When the growth temperature was decreased to 400°C, p-type GaAs was obtained with specular surface. The hole concentration increased with decreasing V/III ratio. The hole concentration was as high as 5.5 × 10 17 cm 4 for the sample grown at 400°C with V/III ratio = 2.",

keywords = "Low-temperature growth of GaAs, OMVPE, TBAs, TEGa",

author = "Keiji Hidaka and Takashi Hiramatsu and Yoshikazu Terai and Osamu Eryu and Yasufumi Fujiwara",

year = "2007",

month = sep,

doi = "10.2472/jsms.56.880",

language = "English",

volume = "56",

pages = "880--885",

journal = "Zairyo/Journal of the Society of Materials Science, Japan",

issn = "0514-5163",

publisher = "Society of Materials Science Japan",

number = "9",

}

TY - JOUR

T1 - Low-temperature growth of GaAs by organometallic vapor phase epitaxy using TEGa and TBAs

AU - Hidaka, Keiji

AU - Hiramatsu, Takashi

AU - Terai, Yoshikazu

AU - Eryu, Osamu

AU - Fujiwara, Yasufumi

PY - 2007/9

Y1 - 2007/9

N2 - GaAs epitaxial layers were grown by organometallic vapor phase epitaxy (OMVPE) using TEGa and TBAs over a wide range of growth temperature (350°C-700°C) and V/III ratio (2-9). GaAs with excellent surface morphology was obtained when the growth temperature was higher than 600°C. The GaAs surface tended to be rough with decreasing growth temperature below 550°C. When the growth temperature was decreased to 400°C, p-type GaAs was obtained with specular surface. The hole concentration increased with decreasing V/III ratio. The hole concentration was as high as 5.5 × 10 17 cm 4 for the sample grown at 400°C with V/III ratio = 2.

AB - GaAs epitaxial layers were grown by organometallic vapor phase epitaxy (OMVPE) using TEGa and TBAs over a wide range of growth temperature (350°C-700°C) and V/III ratio (2-9). GaAs with excellent surface morphology was obtained when the growth temperature was higher than 600°C. The GaAs surface tended to be rough with decreasing growth temperature below 550°C. When the growth temperature was decreased to 400°C, p-type GaAs was obtained with specular surface. The hole concentration increased with decreasing V/III ratio. The hole concentration was as high as 5.5 × 10 17 cm 4 for the sample grown at 400°C with V/III ratio = 2.

KW - Low-temperature growth of GaAs

KW - OMVPE

KW - TBAs

KW - TEGa

UR - https://www.scopus.com/pages/publications/37049000806

UR - https://www.scopus.com/pages/publications/37049000806#tab=citedBy

U2 - 10.2472/jsms.56.880

DO - 10.2472/jsms.56.880

M3 - Article

AN - SCOPUS:37049000806

SN - 0514-5163

VL - 56

SP - 880

EP - 885

JO - Zairyo/Journal of the Society of Materials Science, Japan

JF - Zairyo/Journal of the Society of Materials Science, Japan

IS - 9

ER -

Low-temperature growth of GaAs by organometallic vapor phase epitaxy using TEGa and TBAs

Abstract

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