Novel deposition technique of Er-doped a-Si:H combining catalytic chemical vapor deposition and pulsed laser-ablation

Atsushi Masuda; Joe Sakai; Haruo Akiyama; Osamu Eryu; Kenshiro Nakashima; Hideki Matsumura

doi:10.1016/s0022-3093(99)00780-2

Novel deposition technique of Er-doped a-Si:H combining catalytic chemical vapor deposition and pulsed laser-ablation

Atsushi Masuda
, Joe Sakai
, Haruo Akiyama
, Osamu Eryu
, Kenshiro Nakashima
, Hideki Matsumura

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Er-doped hydrogenated amorphous silicon (a-Si:H) films were prepared by a novel deposition technique combining catalytic chemical vapor deposition (CVD) and pulsed laser-ablation. Er content was controlled, ranging from 8 x 10¹⁹ to 7 x 10²⁰ cm^-3, by increasing the gas pressure during deposition from 6.7 to 106 Pa. Photoluminescence (PL) properties were measured at various temperatures. PL originating from Er 4f-intra transition was observed even at room temperature. Activation energy for the quenching the PL intensity is smaller than that for Er-doped single crystal Si. Based on these results we suggest that Er-doped a-Si:H films prepared by our method are promising materials for optical-communication devices.

Original language	English
Pages (from-to)	136-140
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	266-269 A
DOIs	https://doi.org/10.1016/s0022-3093(99)00780-2
Publication status	Published - 01-05-2000
Externally published	Yes
Event	18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, United States Duration: 23-08-1999 → 27-08-1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/s0022-3093(99)00780-2

Cite this

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title = "Novel deposition technique of Er-doped a-Si:H combining catalytic chemical vapor deposition and pulsed laser-ablation",

abstract = "Er-doped hydrogenated amorphous silicon (a-Si:H) films were prepared by a novel deposition technique combining catalytic chemical vapor deposition (CVD) and pulsed laser-ablation. Er content was controlled, ranging from 8 x 1019 to 7 x 1020 cm-3, by increasing the gas pressure during deposition from 6.7 to 106 Pa. Photoluminescence (PL) properties were measured at various temperatures. PL originating from Er 4f-intra transition was observed even at room temperature. Activation energy for the quenching the PL intensity is smaller than that for Er-doped single crystal Si. Based on these results we suggest that Er-doped a-Si:H films prepared by our method are promising materials for optical-communication devices.",

author = "Atsushi Masuda and Joe Sakai and Haruo Akiyama and Osamu Eryu and Kenshiro Nakashima and Hideki Matsumura",

year = "2000",

month = may,

day = "1",

doi = "10.1016/s0022-3093(99)00780-2",

language = "English",

volume = "266-269 A",

pages = "136--140",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

note = "18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) ; Conference date: 23-08-1999 Through 27-08-1999",

}

TY - JOUR

T1 - Novel deposition technique of Er-doped a-Si:H combining catalytic chemical vapor deposition and pulsed laser-ablation

AU - Masuda, Atsushi

AU - Sakai, Joe

AU - Akiyama, Haruo

AU - Eryu, Osamu

AU - Nakashima, Kenshiro

AU - Matsumura, Hideki

PY - 2000/5/1

Y1 - 2000/5/1

N2 - Er-doped hydrogenated amorphous silicon (a-Si:H) films were prepared by a novel deposition technique combining catalytic chemical vapor deposition (CVD) and pulsed laser-ablation. Er content was controlled, ranging from 8 x 1019 to 7 x 1020 cm-3, by increasing the gas pressure during deposition from 6.7 to 106 Pa. Photoluminescence (PL) properties were measured at various temperatures. PL originating from Er 4f-intra transition was observed even at room temperature. Activation energy for the quenching the PL intensity is smaller than that for Er-doped single crystal Si. Based on these results we suggest that Er-doped a-Si:H films prepared by our method are promising materials for optical-communication devices.

AB - Er-doped hydrogenated amorphous silicon (a-Si:H) films were prepared by a novel deposition technique combining catalytic chemical vapor deposition (CVD) and pulsed laser-ablation. Er content was controlled, ranging from 8 x 1019 to 7 x 1020 cm-3, by increasing the gas pressure during deposition from 6.7 to 106 Pa. Photoluminescence (PL) properties were measured at various temperatures. PL originating from Er 4f-intra transition was observed even at room temperature. Activation energy for the quenching the PL intensity is smaller than that for Er-doped single crystal Si. Based on these results we suggest that Er-doped a-Si:H films prepared by our method are promising materials for optical-communication devices.

UR - https://www.scopus.com/pages/publications/0345849821

UR - https://www.scopus.com/pages/publications/0345849821#tab=citedBy

U2 - 10.1016/s0022-3093(99)00780-2

DO - 10.1016/s0022-3093(99)00780-2

M3 - Conference article

AN - SCOPUS:0345849821

SN - 0022-3093

VL - 266-269 A

SP - 136

EP - 140

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

T2 - 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18)

Y2 - 23 August 1999 through 27 August 1999

ER -

Novel deposition technique of Er-doped a-Si:H combining catalytic chemical vapor deposition and pulsed laser-ablation

Abstract

All Science Journal Classification (ASJC) codes

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