Optical centers related to laser-doped erbium in silicon

K. Nakashima; O. Eryu; O. Iioka; H. Minami; M. Watanabe

doi:10.1557/proc-422-75

Optical centers related to laser-doped erbium in silicon

K. Nakashima, O. Eryu, O. Iioka, H. Minami, M. Watanabe

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Excimer laser irradiation has been applied to dope erbium ions in silicon. Er-doping is realized with both processes of the Er-diffusion in the melted region and the subsequent solid solidification. Er atoms at the maximum concentration of 10²¹ cm^-3 are doped in the region of 150 nm thickness without significant defect formation and amorphization. Stable Er-optical centers, emitting well known series of luminescence lines near 1.54 μm, are formed after short term heat treatments at a relatively low temperature. Optical centers are distributed in proportional to the total Er concentration in the doped region. Oxygen atoms are found to play critical roles for stabilizing Er-optical centers and for rearranging the surroundings of Er ions. Modified bonding states of O and Er other than those in SiO₂ or Er₂O₃ are formed in the Er doped region during both doping and annealing processes.

Original language	English
Pages (from-to)	75-80
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	422
DOIs	https://doi.org/10.1557/proc-422-75
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 08-04-1996 → 12-04-1996

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Cite this

@article{19de8e2e7b204abfa5c66a51a45a1140,

title = "Optical centers related to laser-doped erbium in silicon",

abstract = "Excimer laser irradiation has been applied to dope erbium ions in silicon. Er-doping is realized with both processes of the Er-diffusion in the melted region and the subsequent solid solidification. Er atoms at the maximum concentration of 1021 cm-3 are doped in the region of 150 nm thickness without significant defect formation and amorphization. Stable Er-optical centers, emitting well known series of luminescence lines near 1.54 μm, are formed after short term heat treatments at a relatively low temperature. Optical centers are distributed in proportional to the total Er concentration in the doped region. Oxygen atoms are found to play critical roles for stabilizing Er-optical centers and for rearranging the surroundings of Er ions. Modified bonding states of O and Er other than those in SiO2 or Er2O3 are formed in the Er doped region during both doping and annealing processes.",

author = "K. Nakashima and O. Eryu and O. Iioka and H. Minami and M. Watanabe",

year = "1996",

doi = "10.1557/proc-422-75",

language = "English",

volume = "422",

pages = "75--80",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

}

TY - JOUR

T1 - Optical centers related to laser-doped erbium in silicon

AU - Nakashima, K.

AU - Eryu, O.

AU - Iioka, O.

AU - Minami, H.

AU - Watanabe, M.

PY - 1996

Y1 - 1996

N2 - Excimer laser irradiation has been applied to dope erbium ions in silicon. Er-doping is realized with both processes of the Er-diffusion in the melted region and the subsequent solid solidification. Er atoms at the maximum concentration of 1021 cm-3 are doped in the region of 150 nm thickness without significant defect formation and amorphization. Stable Er-optical centers, emitting well known series of luminescence lines near 1.54 μm, are formed after short term heat treatments at a relatively low temperature. Optical centers are distributed in proportional to the total Er concentration in the doped region. Oxygen atoms are found to play critical roles for stabilizing Er-optical centers and for rearranging the surroundings of Er ions. Modified bonding states of O and Er other than those in SiO2 or Er2O3 are formed in the Er doped region during both doping and annealing processes.

AB - Excimer laser irradiation has been applied to dope erbium ions in silicon. Er-doping is realized with both processes of the Er-diffusion in the melted region and the subsequent solid solidification. Er atoms at the maximum concentration of 1021 cm-3 are doped in the region of 150 nm thickness without significant defect formation and amorphization. Stable Er-optical centers, emitting well known series of luminescence lines near 1.54 μm, are formed after short term heat treatments at a relatively low temperature. Optical centers are distributed in proportional to the total Er concentration in the doped region. Oxygen atoms are found to play critical roles for stabilizing Er-optical centers and for rearranging the surroundings of Er ions. Modified bonding states of O and Er other than those in SiO2 or Er2O3 are formed in the Er doped region during both doping and annealing processes.

UR - https://www.scopus.com/pages/publications/0030399808

UR - https://www.scopus.com/inward/citedby.url?scp=0030399808&partnerID=8YFLogxK

U2 - 10.1557/proc-422-75

DO - 10.1557/proc-422-75

M3 - Conference article

AN - SCOPUS:0030399808

SN - 0272-9172

VL - 422

SP - 75

EP - 80

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Optical centers related to laser-doped erbium in silicon

Abstract

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