Abstract
Optical emission and surface compositional change during the laser-etching process of CdTe are reported. The etching rate increases in proportion to the laser energy density. However, the increase in etching rate is suppressed because ablation plasma plumes generated by the laser irradiation at the energy densities above 0.4 J/cm2 shield the laser beam. The etching rate at the energy density of 1.0 J/cm2 has been determined to be 91 nm/pulse. Also, 80-μm-deep and 55-μm-wide trenches have been formed with the laser-etching process.
| Original language | English |
|---|---|
| Pages (from-to) | 1428-1431 |
| Number of pages | 4 |
| Journal | Journal of Electronic Materials |
| Volume | 34 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 11-2005 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry