Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions

Takeshi Ohshima; Akira Uedono; Hiroshi Abe; Z. Q. Chen; Hisayoshi Itoh; Masahito Yoshikawa; Koji Abe; Osamu Eryu; Kenshiro Nakashima

doi:10.1016/S0921-4526(01)00780-3

Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions

Takeshi Ohshima, Akira Uedono, Hiroshi Abe, Z. Q. Chen, Hisayoshi Itoh, Masahito Yoshikawa, Koji Abe, Osamu Eryu, Kenshiro Nakashima

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Co-implantation of Al (2×10¹⁸/cm^-3) and C (1×10¹⁸/cm^-3), Al/C, into 6H-SiC and subsequent annealing up to 1650°C were performed. Vacancy-type defects in the implanted layers were studied by positron annihilation spectroscopy. The mean size of vacancy-type defects produced by Al/C-implantation is found to be close to the size of divacancy. The mean size of vacancy-type defects is hardly changed by annealing below 600°C, and vacancy clustering occurs in an annealing temperature range between 600°C and 1000°C. At annealing temperatures between 1000°C and 1400°C, the mean size of vacancy-type defects decreases, and the major vacancy defects are annealed out above 1400°C. No significant difference is observed in the annealing behavior of vacancy-type defects between samples implanted with Al/C and only Al.

Original language	English
Pages (from-to)	652-655
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	308-310
DOIs	https://doi.org/10.1016/S0921-4526(01)00780-3
Publication status	Published - 12-2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4526(01)00780-3

Cite this

@article{51da3da48033446b84a9534ed5f8ef99,

title = "Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions",

abstract = "Co-implantation of Al (2×1018/cm-3) and C (1×1018/cm-3), Al/C, into 6H-SiC and subsequent annealing up to 1650°C were performed. Vacancy-type defects in the implanted layers were studied by positron annihilation spectroscopy. The mean size of vacancy-type defects produced by Al/C-implantation is found to be close to the size of divacancy. The mean size of vacancy-type defects is hardly changed by annealing below 600°C, and vacancy clustering occurs in an annealing temperature range between 600°C and 1000°C. At annealing temperatures between 1000°C and 1400°C, the mean size of vacancy-type defects decreases, and the major vacancy defects are annealed out above 1400°C. No significant difference is observed in the annealing behavior of vacancy-type defects between samples implanted with Al/C and only Al.",

keywords = "Co-implantation, Positron annihilation, Silicon carbide, Vacancy-type defects",

author = "Takeshi Ohshima and Akira Uedono and Hiroshi Abe and Chen, \{Z. Q.\} and Hisayoshi Itoh and Masahito Yoshikawa and Koji Abe and Osamu Eryu and Kenshiro Nakashima",

year = "2001",

month = dec,

doi = "10.1016/S0921-4526(01)00780-3",

language = "English",

volume = "308-310",

pages = "652--655",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions

AU - Ohshima, Takeshi

AU - Uedono, Akira

AU - Abe, Hiroshi

AU - Chen, Z. Q.

AU - Itoh, Hisayoshi

AU - Yoshikawa, Masahito

AU - Abe, Koji

AU - Eryu, Osamu

AU - Nakashima, Kenshiro

PY - 2001/12

Y1 - 2001/12

N2 - Co-implantation of Al (2×1018/cm-3) and C (1×1018/cm-3), Al/C, into 6H-SiC and subsequent annealing up to 1650°C were performed. Vacancy-type defects in the implanted layers were studied by positron annihilation spectroscopy. The mean size of vacancy-type defects produced by Al/C-implantation is found to be close to the size of divacancy. The mean size of vacancy-type defects is hardly changed by annealing below 600°C, and vacancy clustering occurs in an annealing temperature range between 600°C and 1000°C. At annealing temperatures between 1000°C and 1400°C, the mean size of vacancy-type defects decreases, and the major vacancy defects are annealed out above 1400°C. No significant difference is observed in the annealing behavior of vacancy-type defects between samples implanted with Al/C and only Al.

AB - Co-implantation of Al (2×1018/cm-3) and C (1×1018/cm-3), Al/C, into 6H-SiC and subsequent annealing up to 1650°C were performed. Vacancy-type defects in the implanted layers were studied by positron annihilation spectroscopy. The mean size of vacancy-type defects produced by Al/C-implantation is found to be close to the size of divacancy. The mean size of vacancy-type defects is hardly changed by annealing below 600°C, and vacancy clustering occurs in an annealing temperature range between 600°C and 1000°C. At annealing temperatures between 1000°C and 1400°C, the mean size of vacancy-type defects decreases, and the major vacancy defects are annealed out above 1400°C. No significant difference is observed in the annealing behavior of vacancy-type defects between samples implanted with Al/C and only Al.

KW - Co-implantation

KW - Positron annihilation

KW - Silicon carbide

KW - Vacancy-type defects

UR - https://www.scopus.com/pages/publications/0035670382

UR - https://www.scopus.com/inward/citedby.url?scp=0035670382&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(01)00780-3

DO - 10.1016/S0921-4526(01)00780-3

M3 - Article

AN - SCOPUS:0035670382

SN - 0921-4526

VL - 308-310

SP - 652

EP - 655

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this