Profile redistribution of implanted Zn impurities in Si due to explosive crystallization from a surface layer

O. Eryu; K. Murakami; K. Takita; K. Masuda

doi:10.1016/0168-583X(88)90655-6

Profile redistribution of implanted Zn impurities in Si due to explosive crystallization from a surface layer

O. Eryu
, K. Murakami
, K. Takita
, K. Masuda

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Implanted Zn impurities were found to segregate at the interface between ion-implanted amorphous Si and underlying crystal Si after pulsed laser irradiation with energy densities less than that required to cause liquid phase epitaxial regrowth. Both time-resolved reflectivity from the back and front sides indicate a strong correlation between the internal Zn impurity segregation and explosive crystallization. This measurement also gives a direct evidence of coexistence of a liquid Si and polycrystalline nuclei at the surface layer at energy densities from 0.27 to 0.5 J/cm².

Original language	English
Pages (from-to)	665-668
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	33
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(88)90655-6
Publication status	Published - 02-06-1988
Externally published	Yes

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

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10.1016/0168-583X(88)90655-6

Cite this

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title = "Profile redistribution of implanted Zn impurities in Si due to explosive crystallization from a surface layer",

abstract = "Implanted Zn impurities were found to segregate at the interface between ion-implanted amorphous Si and underlying crystal Si after pulsed laser irradiation with energy densities less than that required to cause liquid phase epitaxial regrowth. Both time-resolved reflectivity from the back and front sides indicate a strong correlation between the internal Zn impurity segregation and explosive crystallization. This measurement also gives a direct evidence of coexistence of a liquid Si and polycrystalline nuclei at the surface layer at energy densities from 0.27 to 0.5 J/cm2.",

author = "O. Eryu and K. Murakami and K. Takita and K. Masuda",

year = "1988",

month = jun,

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doi = "10.1016/0168-583X(88)90655-6",

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journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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}

Profile redistribution of implanted Zn impurities in Si due to explosive crystallization from a surface layer. / Eryu, O.; Murakami, K.; Takita, K. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 33, No. 1-4, 02.06.1988, p. 665-668.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Profile redistribution of implanted Zn impurities in Si due to explosive crystallization from a surface layer

AU - Eryu, O.

AU - Murakami, K.

AU - Takita, K.

AU - Masuda, K.

PY - 1988/6/2

Y1 - 1988/6/2

N2 - Implanted Zn impurities were found to segregate at the interface between ion-implanted amorphous Si and underlying crystal Si after pulsed laser irradiation with energy densities less than that required to cause liquid phase epitaxial regrowth. Both time-resolved reflectivity from the back and front sides indicate a strong correlation between the internal Zn impurity segregation and explosive crystallization. This measurement also gives a direct evidence of coexistence of a liquid Si and polycrystalline nuclei at the surface layer at energy densities from 0.27 to 0.5 J/cm2.

AB - Implanted Zn impurities were found to segregate at the interface between ion-implanted amorphous Si and underlying crystal Si after pulsed laser irradiation with energy densities less than that required to cause liquid phase epitaxial regrowth. Both time-resolved reflectivity from the back and front sides indicate a strong correlation between the internal Zn impurity segregation and explosive crystallization. This measurement also gives a direct evidence of coexistence of a liquid Si and polycrystalline nuclei at the surface layer at energy densities from 0.27 to 0.5 J/cm2.

UR - https://www.scopus.com/pages/publications/0024018599

UR - https://www.scopus.com/pages/publications/0024018599#tab=citedBy

U2 - 10.1016/0168-583X(88)90655-6

DO - 10.1016/0168-583X(88)90655-6

M3 - Article

AN - SCOPUS:0024018599

SN - 0168-583X

VL - 33

SP - 665

EP - 668

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Profile redistribution of implanted Zn impurities in Si due to explosive crystallization from a surface layer

Abstract

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