Spin-dependent electron tunnelling and spin relaxation in quantum dots in regime with filling factor of around two

S. Tarucha, Keisuke Hitachi, J. Sugawa, M. Yamamoto

Research output: Contribution to journalArticle

Abstract

Spin-dependent electron tunnelling and spin relaxation were studied for a quantum dot in the regime with a filling factor between two and four. In this regime, the electronic configuration of a quantum dot undergoes transitions between a spin singlet and triplet states for an even number of electrons, and between two doublet states for an odd number of electrons. These transitions were clearly distinguished by using quantum wires as spin filtering contact leads to the dot. In addition, the temporal behaviour of electron tunnelling was studied for a quantum dot in a similar filling factor regime, using a quantum point contact as a charge sensor. Electron tunnelling through the dot in a spin singlet state could be well distinguished from that in a triplet state using the fact that the tunnelling rate was much larger for the triplet state. The difference in the tunnelling rate was also used to derive a triplet-to-singlet- state relaxation time. The obtained relaxation time agreed fairly well with that predicted by the theory of spin-orbit interaction. 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original languageEnglish
Pages (from-to)2950-2959
Number of pages10
JournalPhysica Status Solidi (B) Basic Research
Volume244
Issue number8
DOIs
Publication statusPublished - 01-08-2007

Fingerprint

Electron tunneling
electron tunneling
electron spin
Semiconductor quantum dots
quantum dots
atomic energy levels
Relaxation time
Semiconductor quantum wires
Electrons
relaxation time
Point contacts
Electron transitions
Orbits
quantum wires
spin-orbit interactions
electrons
Sensors
sensors
configurations
electronics

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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abstract = "Spin-dependent electron tunnelling and spin relaxation were studied for a quantum dot in the regime with a filling factor between two and four. In this regime, the electronic configuration of a quantum dot undergoes transitions between a spin singlet and triplet states for an even number of electrons, and between two doublet states for an odd number of electrons. These transitions were clearly distinguished by using quantum wires as spin filtering contact leads to the dot. In addition, the temporal behaviour of electron tunnelling was studied for a quantum dot in a similar filling factor regime, using a quantum point contact as a charge sensor. Electron tunnelling through the dot in a spin singlet state could be well distinguished from that in a triplet state using the fact that the tunnelling rate was much larger for the triplet state. The difference in the tunnelling rate was also used to derive a triplet-to-singlet- state relaxation time. The obtained relaxation time agreed fairly well with that predicted by the theory of spin-orbit interaction. 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",
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Spin-dependent electron tunnelling and spin relaxation in quantum dots in regime with filling factor of around two. / Tarucha, S.; Hitachi, Keisuke; Sugawa, J.; Yamamoto, M.

In: Physica Status Solidi (B) Basic Research, Vol. 244, No. 8, 01.08.2007, p. 2950-2959.

Research output: Contribution to journalArticle

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AU - Hitachi, Keisuke

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