Strain imaging of a Cu2S switching device

Keiji Takata; Ryota Tamura; Toshihiro Kasama; Masataka Fukuyama; Shin Yokoyama; Hiroshi Kajiyama

doi:10.1016/j.cap.2011.04.004

Strain imaging of a Cu₂S switching device

Keiji Takata
, Ryota Tamura
, Toshihiro Kasama
, Masataka Fukuyama
, Shin Yokoyama
, Hiroshi Kajiyama

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Strain imaging of electrochemical behavior of a solid electrolyte Cu ₂S in switching devices for nonvolatile memories is presented. The precipitation and dissolution of Cu, and the nonstoichiometry changes cause changes in volume. Strain imaging we have proposed detects the volume changes through the surface displacements using scanning probe microscopy and provides high resolution images. We observed the distributions of the electrochemical reactions in Cu₂S and located the Cu bridges causing switching.

Original language	English
Pages (from-to)	1364-1367
Number of pages	4
Journal	Current Applied Physics
Volume	11
Issue number	6
DOIs	https://doi.org/10.1016/j.cap.2011.04.004
Publication status	Published - 11-2011
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Materials Science
General Physics and Astronomy

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10.1016/j.cap.2011.04.004

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title = "Strain imaging of a Cu2S switching device",

abstract = "Strain imaging of electrochemical behavior of a solid electrolyte Cu 2S in switching devices for nonvolatile memories is presented. The precipitation and dissolution of Cu, and the nonstoichiometry changes cause changes in volume. Strain imaging we have proposed detects the volume changes through the surface displacements using scanning probe microscopy and provides high resolution images. We observed the distributions of the electrochemical reactions in Cu2S and located the Cu bridges causing switching.",

keywords = "Copper sulfide, Resistance random access memory, Scanning probe microscopy, Solid electrolyte",

author = "Keiji Takata and Ryota Tamura and Toshihiro Kasama and Masataka Fukuyama and Shin Yokoyama and Hiroshi Kajiyama",

year = "2011",

month = nov,

doi = "10.1016/j.cap.2011.04.004",

language = "English",

volume = "11",

pages = "1364--1367",

journal = "Current Applied Physics",

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T1 - Strain imaging of a Cu2S switching device

AU - Takata, Keiji

AU - Tamura, Ryota

AU - Kasama, Toshihiro

AU - Fukuyama, Masataka

AU - Yokoyama, Shin

AU - Kajiyama, Hiroshi

PY - 2011/11

Y1 - 2011/11

N2 - Strain imaging of electrochemical behavior of a solid electrolyte Cu 2S in switching devices for nonvolatile memories is presented. The precipitation and dissolution of Cu, and the nonstoichiometry changes cause changes in volume. Strain imaging we have proposed detects the volume changes through the surface displacements using scanning probe microscopy and provides high resolution images. We observed the distributions of the electrochemical reactions in Cu2S and located the Cu bridges causing switching.

AB - Strain imaging of electrochemical behavior of a solid electrolyte Cu 2S in switching devices for nonvolatile memories is presented. The precipitation and dissolution of Cu, and the nonstoichiometry changes cause changes in volume. Strain imaging we have proposed detects the volume changes through the surface displacements using scanning probe microscopy and provides high resolution images. We observed the distributions of the electrochemical reactions in Cu2S and located the Cu bridges causing switching.

KW - Copper sulfide

KW - Resistance random access memory

KW - Scanning probe microscopy

KW - Solid electrolyte

UR - https://www.scopus.com/pages/publications/80052268623

UR - https://www.scopus.com/pages/publications/80052268623#tab=citedBy

U2 - 10.1016/j.cap.2011.04.004

DO - 10.1016/j.cap.2011.04.004

M3 - Article

AN - SCOPUS:80052268623

SN - 1567-1739

VL - 11

SP - 1364

EP - 1367

JO - Current Applied Physics

JF - Current Applied Physics

IS - 6

ER -

Strain imaging of a Cu₂S switching device

Abstract

All Science Journal Classification (ASJC) codes

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