@inproceedings{4510e013bbe54edfa8c7032a9bec42a0,
title = "The atomic step induced by off angle CMP influences the electrical properties of the SiC surface",
abstract = "In this work, we made an off-axis surface of SiC with the chemical-mechanical polishing (CMP) method to examine the influence of an atomic step on the electronic properties of devices. Low energy ion scattering spectroscopy (LEISS) shows the Si-face and C-face with SiC structure on the polished SiC monocrystal. We considered that the atomic step on the surface influenced device properties, especially the leakage current of a Schottky diode. C atoms at the step and terrace, which generated the leakage current at the metal-semiconductor interface of a Schottky diode, have been clarified by conductive atomic force microscopy (CAFM).",
keywords = "Atomic step, CAFM, CMP, LEISS, SBD",
author = "Yayoi Tanaka and Takao Kanda and Kazuyuki Nagatoshi and Masamichi Yoshimura and Osamu Eryu",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.569",
language = "English",
isbn = "9783037854198",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "569--572",
editor = "Devaty, \{Robert P.\} and Michael Dudley and Chow, \{T. Paul\} and Neudeck, \{Philip G.\}",
booktitle = "Silicon Carbide and Related Materials 2011, ICSCRM 2011",
address = "Switzerland",
note = "14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 ; Conference date: 11-09-2011 Through 16-09-2011",
}