Triplet to singlet spin relaxation in a GaAs quantum dot in the regime of filling factor between 2 and 4

K. Hitachi, J. Sugawa, M. Yamamoto, S. Tarucha

Research output: Contribution to journalArticle

Abstract

We used a time-resolved charge readout technique to study the spin-related transition and spin relaxation for a quantum dot near the regime of filling factor ν=2. The measured tunneling time was seven times faster for a spin triplet than for a spin singlet. We used this difference to identify the singlet-triplet transition under a magnetic field and derive spin relaxation time from the triplet to singlet. We also solved a rate equation to reproduce the experimental data with spin relaxation time as a parameter.

Original languageEnglish
Pages (from-to)1733-1735
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number5
DOIs
Publication statusPublished - 01-03-2008

Fingerprint

Relaxation time
Semiconductor quantum dots
quantum dots
Magnetic fields
relaxation time
readout
gallium arsenide
magnetic fields

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

@article{0f037a32c5e0402196bc31a346fea6c6,
title = "Triplet to singlet spin relaxation in a GaAs quantum dot in the regime of filling factor between 2 and 4",
abstract = "We used a time-resolved charge readout technique to study the spin-related transition and spin relaxation for a quantum dot near the regime of filling factor ν=2. The measured tunneling time was seven times faster for a spin triplet than for a spin singlet. We used this difference to identify the singlet-triplet transition under a magnetic field and derive spin relaxation time from the triplet to singlet. We also solved a rate equation to reproduce the experimental data with spin relaxation time as a parameter.",
author = "K. Hitachi and J. Sugawa and M. Yamamoto and S. Tarucha",
year = "2008",
month = "3",
day = "1",
doi = "10.1016/j.physe.2007.10.117",
language = "English",
volume = "40",
pages = "1733--1735",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "5",

}

Triplet to singlet spin relaxation in a GaAs quantum dot in the regime of filling factor between 2 and 4. / Hitachi, K.; Sugawa, J.; Yamamoto, M.; Tarucha, S.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 40, No. 5, 01.03.2008, p. 1733-1735.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Triplet to singlet spin relaxation in a GaAs quantum dot in the regime of filling factor between 2 and 4

AU - Hitachi, K.

AU - Sugawa, J.

AU - Yamamoto, M.

AU - Tarucha, S.

PY - 2008/3/1

Y1 - 2008/3/1

N2 - We used a time-resolved charge readout technique to study the spin-related transition and spin relaxation for a quantum dot near the regime of filling factor ν=2. The measured tunneling time was seven times faster for a spin triplet than for a spin singlet. We used this difference to identify the singlet-triplet transition under a magnetic field and derive spin relaxation time from the triplet to singlet. We also solved a rate equation to reproduce the experimental data with spin relaxation time as a parameter.

AB - We used a time-resolved charge readout technique to study the spin-related transition and spin relaxation for a quantum dot near the regime of filling factor ν=2. The measured tunneling time was seven times faster for a spin triplet than for a spin singlet. We used this difference to identify the singlet-triplet transition under a magnetic field and derive spin relaxation time from the triplet to singlet. We also solved a rate equation to reproduce the experimental data with spin relaxation time as a parameter.

UR - http://www.scopus.com/inward/record.url?scp=39649104103&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39649104103&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2007.10.117

DO - 10.1016/j.physe.2007.10.117

M3 - Article

VL - 40

SP - 1733

EP - 1735

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 5

ER -