Triplet to singlet spin relaxation in a GaAs quantum dot in the regime of filling factor between 2 and 4

K. Hitachi, J. Sugawa, M. Yamamoto, S. Tarucha

Research output: Contribution to journalArticle

Abstract

We used a time-resolved charge readout technique to study the spin-related transition and spin relaxation for a quantum dot near the regime of filling factor ν=2. The measured tunneling time was seven times faster for a spin triplet than for a spin singlet. We used this difference to identify the singlet-triplet transition under a magnetic field and derive spin relaxation time from the triplet to singlet. We also solved a rate equation to reproduce the experimental data with spin relaxation time as a parameter.

Original languageEnglish
Pages (from-to)1733-1735
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number5
DOIs
Publication statusPublished - 01-03-2008
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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