@inproceedings{bcbef3d1acc144088fe076a30d15903c,
title = "A new type of SiC gas sensor with a pn-junction structure",
abstract = "Pn-junction type gas sensors, operated at 500°C, have been fabricated on 6H-SiC substrates with both ion implantation and laser processing techniques. The device structures are composed of catalytic metal layer/ohmic contact layer/SiC pn-j unction/ohmic back contact layer. Ohmic contact layers play roles for adhesion and barrier layer to the catalytic metal material. Shallow p-type layers made with Al-doping in n-type SiC epi-layers show good responses to hydrogen, hydrocarbons, and ammonia dispersed in N2 gas ambient. Device stability wholly depends on the contact stability at elevated temperature.",
keywords = "Gas sensors, Ion implantation, Laser processing, Pn junctions, Response, Sensitivity",
author = "K. Nakashima and Y. Okuyama and S. Ando and O. Eryu and K. Abe and H. Yokoi and T. Oshima",
note = "Publisher Copyright: {\textcopyright} (2002) Trans Tech Publications, Switzerland.; International Conference on Silicon Carbide and Related Materials, ICSCRM 2001 ; Conference date: 28-10-2001 Through 02-11-2001",
year = "2002",
doi = "10.4028/www.scientific.net/MSF.389-393.1427",
language = "English",
isbn = "9780878498949",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "1427--1430",
editor = "S. Yoshida and S. Nishino and H. Harima and T. Kimoto",
booktitle = "Silicon Carbide and Related Materials 2001",
address = "Switzerland",
}