AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE

Crack-free thick AlN layers with low impurity concentrations were grown on free-standing AlN substrates fabricated by a sublimation method. Cracks due to tensile stresses were generated in the overgrowth layer when using on-axis AlN (0 0 0 1) substrates, as indicated by Raman scattering spectroscopy. In contrast, cracks were not generated when using 5°off-angle AlN (0 0 0 1) substrates. High crystalline quality was indicated by X-ray rocking curve (XRC) analysis. The full width at half maximum (FWHM) values of the (0 0 0 2) and (1 0-1 0) diffractions were 277 and 306 arcsec, respectively. Secondary ion mass spectrometry (SIMS) measurements indicated that the Si and C impurity concentrations were reduced to half of those in the sublimation-grown AlN substrates.