@inproceedings{7cb567f41aa04497a5721da37d43d8fe,
title = "Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC",
abstract = "We have investigated the annealing of vacancy-type defects and B diffusion in SiC using positron annihilation spectroscopy (PAS) and secondary ion mass spectroscopy (SIMS). Boron (B) and carbon (C) ions were implanted into 6H-SiC substrates, and the samples were annealed up to 1650 °C in Ar. In the PAS study, defective layer to a depth of 200 nm from the surface is observed after annealing between 800 and 1200 °C. This region disappears after annealing above 1500 °C. No significant difference in the annealing behavior of the vacancy-type defects is observed for only B-and C/B-implanted samples. In the SIMS study, the out-diffusion of B in 6H-SiC is observed after annealing above 1400 °C and a dip in the B concentration is created close to the surface. This out-diffusion of B is suppressed by C/B-implantation. This suppression tends to be enhanced by the temperature of the implantation and the concentration of the implanted C.",
keywords = "B Diffusion, B-Implantation, Co-Implantation, Vacancy-Type Defects",
author = "T. Ohshima and A. Uedono and O. Eryu and Lee, \{K. K.\} and K. Abe and H. Itoh and K. Nakashima",
year = "2003",
doi = "10.4028/www.scientific.net/msf.433-436.633",
language = "English",
isbn = "9780878499205",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "633--636",
editor = "Peder Bergman and Erik Janz{\'e}n",
booktitle = "Materials Science Forum",
address = "Switzerland",
note = "Proceedings of the 4th European Conference on Silicon Carbide and Related Materials ; Conference date: 02-09-2002 Through 05-09-2002",
}