TY - GEN
T1 - Copper ohmic contacts to n-type SiC formed with pulsed excimer laser irradiation
AU - Abe, K.
AU - Sumitomo, M.
AU - Eryu, O.
AU - Nakashima, K.
PY - 2001
Y1 - 2001
N2 - Copper-based ohmic contacts to n-type 6H-SiC have been investigated. In this study, ohmic contacts have been fabricated with pulsed excimer laser irradiation to Cu-deposited substrates at room temperature. It is shown that current-voltage characteristics depend on the laser energy density. Contacts formed by the laser irradiation at the energy density above 1.2 J/cm2 have shown the ohmic behavior. Cu atoms have slightly diffused into SiC by the laser irradiation at 1.4 J/cm2. As a result, a thin ohmic contact layer has been obtained by the laser processing. AES and XRD study have revealed that a Cu-SiC alloy containing Cu silicide (CuSi) is formed by the laser irradiation.
AB - Copper-based ohmic contacts to n-type 6H-SiC have been investigated. In this study, ohmic contacts have been fabricated with pulsed excimer laser irradiation to Cu-deposited substrates at room temperature. It is shown that current-voltage characteristics depend on the laser energy density. Contacts formed by the laser irradiation at the energy density above 1.2 J/cm2 have shown the ohmic behavior. Cu atoms have slightly diffused into SiC by the laser irradiation at 1.4 J/cm2. As a result, a thin ohmic contact layer has been obtained by the laser processing. AES and XRD study have revealed that a Cu-SiC alloy containing Cu silicide (CuSi) is formed by the laser irradiation.
UR - https://www.scopus.com/pages/publications/34249910321
UR - https://www.scopus.com/pages/publications/34249910321#tab=citedBy
U2 - 10.1557/proc-680-e9.20
DO - 10.1557/proc-680-e9.20
M3 - Conference contribution
AN - SCOPUS:34249910321
SN - 1558996168
SN - 9781558996168
T3 - Materials Research Society Symposium Proceedings
SP - 289
EP - 293
BT - Wide-Bandgap Electronics
PB - Materials Research Society
T2 - 2001 MRS Spring Meeting
Y2 - 16 April 2001 through 20 April 2001
ER -