Correlation between Er-luminescent centers and defects in Si co-implanted with Er and O

Correlation between evolution of Er-luminescent centers and the incorporation of Er and O during solid phase epitaxy (SPE) in Er and O co-implanted Si has been investigated, especially paying attention to the role of oxygen on segregation and trapping of Er. The SPE growth rate of the amorphous silicon layer, which is monitored in real time, is greatly enhanced from the beginning stage of SPE by more than one order magnitude in Si co-doped with Er and O, comparing with that of the undoped amorphous Si layer. The strong interaction between Er and O in circumstances under the presence of both species determines the concentration profiles of a majority of the Er and the O, leading to the formation of Er-luminescent centers.