@inproceedings{6906659daf334720b67f109bcf15c2bc,
title = "Effects of the surface condition of the substrates on the electrical characteristics of 4H-SiC MOSFETs",
abstract = "Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) were fabricated on p-type epitaxial 4H-SiC substrates with different surface conditions and these electrical characteristics were compared. The MOSFETs on Chemical Mechanical Polished substrates showed the drain current of the order of 10-12A at a gate voltage of 0 V, and the value of the drain current increased with increasing the surface roughness of substrates. With decreasing the surface roughness of substrates, the values of the threshold voltage decreased and the quality of gate oxide became better.",
keywords = "Metal-oxide-semiconductor field effect transistor (MOSFET), Polishing, Surface condition",
author = "T. Ohshima and S. Onoda and T. Kamada and K. Hotta and K. Kawata and O. Eryu",
year = "2009",
doi = "10.4028/www.scientific.net/MSF.615-617.781",
language = "English",
isbn = "9780878493340",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "781--784",
booktitle = "Silicon Carbide and Related Materials 2008",
address = "Switzerland",
}