Electrical properties of high-dose nitrogen-implanted and rapid thermal annealed 6H-SiC

The annealing time dependence of surface morphologies, crystallinity, and electrical characteristics for the high-dose nitrogen-implanted 6H-SiC has been investigated. Rapid thermal annealing (RTA) was performed at the temperature ranging from 1600 to 1850 °C for 20 s. In comparison with conventional furnace annealed (FA) samples (1550-1650 °C, 180 s in argon), the RTA samples had smoother surfaces and better crystallinity. While no reduction in the thickness of the implanted layer and no redistribution of implanted nitrogen atoms were observed in the RTA samples, the thickness of the implanted layer was reduced by FA. The sheet resistance and electron concentration of the RTA sample at 1750 °C were comparable to those of the FA sample at 1550 °C. We will discuss the difference between the RTA and the FA samples.