Excimer laser annealing of ion-implanted 6H-silicon carbide

Y. Hishida; M. Watanabe; K. Nakashima; O. Eryu

Excimer laser annealing of ion-implanted 6H-silicon carbide

Y. Hishida
, M. Watanabe
, K. Nakashima
, O. Eryu

研究成果: ジャーナルへの寄稿 › 会議記事 › 査読

抄録

XeCl excimer laser annealing of ion-implanted 6H-SiC was carried out. Laser annealed SiC was characterized by Rutherford backscattering, secondary ion mass spectroscopy (SIMS), electrical conductivity and photoluminescence. Laser irradiation reduced the χ values and increased electrical conductivity. The activation efficiency of the laser-annealed Al⁺ implanted SiC was estimated to be about 0.1%. SIMS results suggest that SiC substrates were not melted by laser irradiation and that the laser annealing effect proceeded in solid phase.

本文言語	英語
ページ（範囲）	II/-
ジャーナル	Materials Science Forum
巻	338
出版ステータス	出版済み - 2000
外部発表	はい
イベント	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA 継続期間: 10-10-1999 → 15-10-1999

All Science Journal Classification (ASJC) codes

材料科学一般
凝縮系物理学
材料力学
機械工学

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title = "Excimer laser annealing of ion-implanted 6H-silicon carbide",

abstract = "XeCl excimer laser annealing of ion-implanted 6H-SiC was carried out. Laser annealed SiC was characterized by Rutherford backscattering, secondary ion mass spectroscopy (SIMS), electrical conductivity and photoluminescence. Laser irradiation reduced the χ values and increased electrical conductivity. The activation efficiency of the laser-annealed Al+ implanted SiC was estimated to be about 0.1\%. SIMS results suggest that SiC substrates were not melted by laser irradiation and that the laser annealing effect proceeded in solid phase.",

author = "Y. Hishida and M. Watanabe and K. Nakashima and O. Eryu",

year = "2000",

language = "English",

volume = "338",

pages = "II/--",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

note = "ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

}

TY - JOUR

T1 - Excimer laser annealing of ion-implanted 6H-silicon carbide

AU - Hishida, Y.

AU - Watanabe, M.

AU - Nakashima, K.

AU - Eryu, O.

PY - 2000

Y1 - 2000

N2 - XeCl excimer laser annealing of ion-implanted 6H-SiC was carried out. Laser annealed SiC was characterized by Rutherford backscattering, secondary ion mass spectroscopy (SIMS), electrical conductivity and photoluminescence. Laser irradiation reduced the χ values and increased electrical conductivity. The activation efficiency of the laser-annealed Al+ implanted SiC was estimated to be about 0.1%. SIMS results suggest that SiC substrates were not melted by laser irradiation and that the laser annealing effect proceeded in solid phase.

AB - XeCl excimer laser annealing of ion-implanted 6H-SiC was carried out. Laser annealed SiC was characterized by Rutherford backscattering, secondary ion mass spectroscopy (SIMS), electrical conductivity and photoluminescence. Laser irradiation reduced the χ values and increased electrical conductivity. The activation efficiency of the laser-annealed Al+ implanted SiC was estimated to be about 0.1%. SIMS results suggest that SiC substrates were not melted by laser irradiation and that the laser annealing effect proceeded in solid phase.

UR - https://www.scopus.com/pages/publications/0033718560

UR - https://www.scopus.com/pages/publications/0033718560#tab=citedBy

M3 - Conference article

AN - SCOPUS:0033718560

SN - 0255-5476

VL - 338

SP - II/-

JO - Materials Science Forum

JF - Materials Science Forum

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

Excimer laser annealing of ion-implanted 6H-silicon carbide

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All Science Journal Classification (ASJC) codes

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