Formation of a p-n junction in silicon carbide by aluminum doping at room temperature using a pulsed laser doping method

A p-n junction has been formed in n-type silicon carbide (6H-SiC) by aluminum (Al) doping at room temperature using a pulsed laser doping method. A 6H-SiC substrate in [H₂+(CH₃)₃Al] atmosphere was irradiated by an KrF excimer laser of 20 ns full width at half-maximum. The depth profile of Al determined by secondary ion mass spectroscopy showed a rectangularlike shape with a maximum concentration of 1×10²² Al/cm³. Furthermore, Al atoms were doped to a depth of about 0.05 μm from the surface. The current-voltage characteristics of the p-n junction clearly showed the rectifying property with low leakage current.