Improved ohmic contacts to 6H-SiC by pulsed laser processing

K. Nakashima; O. Eryu; S. Ukai; K. Yoshida; M. Watanabe

Improved ohmic contacts to 6H-SiC by pulsed laser processing

K. Nakashima
, O. Eryu
, S. Ukai
, K. Yoshida
, M. Watanabe

研究成果: ジャーナルへの寄稿 › 会議記事 › 査読

抄録

Ohmic contacts to 6H-SiC have been improved in several points such as contact resistivity, surface morphology, depth profiles, and process temperature. Both W/Ti contacts for n-type and Al/Ti contacts for p-type 6H-SiC have been fabricated with excimer pulsed laser irradiation to the metal-deposited substrates at room temperature. Properties of laser-processed contact have exceeded those of the ordinary annealed contacts. Very thin ohmic contact layers with smooth surface morphology have been obtained by this technology.

本文言語	英語
ページ（範囲）	II/-
ジャーナル	Materials Science Forum
巻	338
出版ステータス	出版済み - 2000
外部発表	はい
イベント	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA 継続期間: 10-10-1999 → 15-10-1999

All Science Journal Classification (ASJC) codes

材料科学一般
凝縮系物理学
材料力学
機械工学

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引用スタイル

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title = "Improved ohmic contacts to 6H-SiC by pulsed laser processing",

abstract = "Ohmic contacts to 6H-SiC have been improved in several points such as contact resistivity, surface morphology, depth profiles, and process temperature. Both W/Ti contacts for n-type and Al/Ti contacts for p-type 6H-SiC have been fabricated with excimer pulsed laser irradiation to the metal-deposited substrates at room temperature. Properties of laser-processed contact have exceeded those of the ordinary annealed contacts. Very thin ohmic contact layers with smooth surface morphology have been obtained by this technology.",

author = "K. Nakashima and O. Eryu and S. Ukai and K. Yoshida and M. Watanabe",

year = "2000",

language = "English",

volume = "338",

pages = "II/--",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

note = "ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

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TY - JOUR

T1 - Improved ohmic contacts to 6H-SiC by pulsed laser processing

AU - Nakashima, K.

AU - Eryu, O.

AU - Ukai, S.

AU - Yoshida, K.

AU - Watanabe, M.

PY - 2000

Y1 - 2000

N2 - Ohmic contacts to 6H-SiC have been improved in several points such as contact resistivity, surface morphology, depth profiles, and process temperature. Both W/Ti contacts for n-type and Al/Ti contacts for p-type 6H-SiC have been fabricated with excimer pulsed laser irradiation to the metal-deposited substrates at room temperature. Properties of laser-processed contact have exceeded those of the ordinary annealed contacts. Very thin ohmic contact layers with smooth surface morphology have been obtained by this technology.

AB - Ohmic contacts to 6H-SiC have been improved in several points such as contact resistivity, surface morphology, depth profiles, and process temperature. Both W/Ti contacts for n-type and Al/Ti contacts for p-type 6H-SiC have been fabricated with excimer pulsed laser irradiation to the metal-deposited substrates at room temperature. Properties of laser-processed contact have exceeded those of the ordinary annealed contacts. Very thin ohmic contact layers with smooth surface morphology have been obtained by this technology.

UR - https://www.scopus.com/pages/publications/0033701915

UR - https://www.scopus.com/pages/publications/0033701915#tab=citedBy

M3 - Conference article

AN - SCOPUS:0033701915

SN - 0255-5476

VL - 338

SP - II/-

JO - Materials Science Forum

JF - Materials Science Forum

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

Improved ohmic contacts to 6H-SiC by pulsed laser processing

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All Science Journal Classification (ASJC) codes

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