Nanostructure formation of SiC using ion implantation and CMP

We succeeded in formation of the relief structures at the nanometer scale for selective positions on single crystal SiC surfaces using the technique of ion implantation for making lattice defects to the desired region by chemical mechanical polishing (CMP) using colloidal silica. In this study, we clarified that defect the layer introduced by ion implantation could be selectively removed by CMP. The removal rate of the ion implantation layer is about 1.6 nm/1 min, when N ion fluence of 2 × 10¹⁵ N⁺/cm ² was implanted. The polishing rate for the un-implanted region by CMP is very low. We succeeded in forming mesa and the valley structures of 50 nm × 2 μm × 100 μm by this technique.