Strain imaging of a Cu₂S switching device

Strain imaging of electrochemical behavior of a solid electrolyte Cu ₂S in switching devices for nonvolatile memories is presented. The precipitation and dissolution of Cu, and the nonstoichiometry changes cause changes in volume. Strain imaging we have proposed detects the volume changes through the surface displacements using scanning probe microscopy and provides high resolution images. We observed the distributions of the electrochemical reactions in Cu₂S and located the Cu bridges causing switching.