Triplet to singlet spin relaxation in a GaAs quantum dot in the regime of filling factor between 2 and 4

K. Hitachi, J. Sugawa, M. Yamamoto, S. Tarucha

研究成果: Article

抜粋

We used a time-resolved charge readout technique to study the spin-related transition and spin relaxation for a quantum dot near the regime of filling factor ν=2. The measured tunneling time was seven times faster for a spin triplet than for a spin singlet. We used this difference to identify the singlet-triplet transition under a magnetic field and derive spin relaxation time from the triplet to singlet. We also solved a rate equation to reproduce the experimental data with spin relaxation time as a parameter.

元の言語English
ページ(範囲)1733-1735
ページ数3
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
40
発行部数5
DOI
出版物ステータスPublished - 01-03-2008
外部発表Yes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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